Strain engineering of the silicon-vacancy center in diamond
نویسندگان
چکیده
Srujan Meesala, ∗ Young-Ik Sohn, ∗ Benjamin Pingault, Linbo Shao, Haig A. Atikian, Jeffrey Holzgrafe, Mustafa Gündoğan, Camille Stavrakas, Alp Sipahigil, 4 Cleaven Chia, Michael J. Burek, Mian Zhang, Lue Wu, Jose L. Pacheco, John Abraham, Edward Bielejec, Mikhail D. Lukin, Mete Atatüre, and Marko Lončar John A. Paulson School of Engineering and Applied Sciences, Harvard University, 29 Oxford Street, Cambridge, MA 02138, USA Cavendish Laboratory, University of Cambridge, J. J. Thomson Avenue, Cambridge CB3 0HE, UK Department of Physics, Harvard University, 17 Oxford Street, Cambridge, MA 02138, USA Institute for Quantum Information and Matter and Thomas J. Watson, Sr., Laboratory of Applied Physics, California Institute of Technology, Pasadena, California 91125, USA Sandia National Laboratories, Albuquerque, NM 87185, USA
منابع مشابه
Electronic structure of the negatively-charged silicon-vacancy center in diamond
Lachlan J. Rogers, ∗ Kay D. Jahnke, Marcus W. Doherty, Andreas Dietrich, Liam McGuinness, Christoph Müller, Tokuyuki Teraji, Hitoshi Sumiya, Junichi Isoya, Neil B. Manson, and Fedor Jelezko Institut für Quantenoptik and IQST, Universität Ulm, D-89081 Ulm, Germany Laser Physics Centre, Research School of Physics and Engineering, Australian National University, ACT 0200, Australia. National Insti...
متن کاملMultiphoton-Excited Fluorescence of Silicon-Vacancy Color Centers in Diamond
Silicon-vacancy color centers in nanodiamonds are promising as fluorescent labels for biological applications, with a narrow, nonbleaching emission line at 738 nm. Two-photon excitation of this fluorescence offers the possibility of low-background detection at significant tissue depth with high threedimensional spatial resolution. We measure the two-photon fluorescence cross section of a negati...
متن کاملAll-optical initialization, readout, and coherent preparation of single silicon-vacancy spins in diamond.
The silicon-vacancy (SiV-) color center in diamond has attracted attention because of its unique optical properties. It exhibits spectral stability and indistinguishability that facilitate efficient generation of photons capable of demonstrating quantum interference. Here we show optical initialization and readout of electronic spin in a single SiV- center with a spin relaxation time of T1=2.4±...
متن کاملAll-optical formation of coherent dark states of silicon-vacancy spins in diamond.
Spin impurities in diamond can be versatile tools for a wide range of solid-state-based quantum technologies, but finding spin impurities that offer sufficient quality in both photonic and spin properties remains a challenge for this pursuit. The silicon-vacancy center has recently attracted much interest because of its spin-accessible optical transitions and the quality of its optical spectrum...
متن کاملAnalytical Threshold Voltage Computations for 22 nm Silicon-on-Diamond MOSFET Incorporating a Second Oxide Layer
In this paper, for the first time, an analytical equation for threshold voltage computations in silicon-on-diamond MOSFET with an additional insulation layer is presented; In this structure, the first insulating layer is diamond which covered the silicon substrate and second insulating layer is SiO2 which is on the diamond and it is limited to the source and drain on both sides. Analytical solu...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
عنوان ژورنال:
دوره شماره
صفحات -
تاریخ انتشار 2018